Large grains of InP and CdTe on recrystallized CdS substrates

Journal Article · Sun Mar 01 00:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329791· OSTI ID:6544059

Krajenbrink, F; Hoberg, P; Montano, H; Zanio, K

Thin films (approx.1 mm) of large-grained (approx.40 mm x approx.40 mm) InP were epitaxially deposited on low-cost recrystallized CdS substrates at 280 /sup 0/C by planar reactive deposition. Large grains of CdTe (approx.40 mm) were also deposited on similar substrates at 460 /sup 0/C by physical vapor deposition. Typically, the recrystallized CdS grain size is about 40 mm. However, grains with dimensions up to 300 mm were observed.

• Research Organization: Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265
• DOE Contract Number: XJ-9-8170-1
• OSTI ID: 6544059
• Journal Information: J. Appl. Phys.; (United States), Vol. 52:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
GRAIN SIZE
RECRYSTALLIZATION
INDIUM PHOSPHIDES
CADMIUM SULFIDES
CHEMICAL REACTIONS
DEPOSITION
EPITAXY
FILMS
HIGH TEMPERATURE
SUBSTRATES
THICKNESS
VAPORS
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
DIMENSIONS
FLUIDS
GASES
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PNICTIDES
SIZE
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
360601* - Other Materials- Preparation & Manufacture