Highly stable strained layer leaky-mode diode laser arrays
- New Mexico Univ., Albuquerque, NM (USA). Center for High Technology Materials
- Sandia National Labs., Albuquerque, NM (USA)
A simple new fabrication process for InGaAs strained quantum well leaky-mode laser arrays is demonstrated. The arrays are ten-element devices grown by two-step metal-organic chemical vapor deposition. The structure consists of a strained quantum well InGaAs graded index-separate confinement active region and a thin (0.12 {mu}m), transparent GaAs waveguide region. The near-field pattern typical of leaky-mode phase-locked arrays is measured. Fundamental mode oscillation is observed up to 2 A (threshold is as low as 174 mA). A 1 {mu}s pulsed optical output power of 172 mW per facet and far-field angle (FWHM) of 1.6 times the diffraction limit is observed at 1 A. This is the first reported operation of a strained quantum well leaky-mode laser utilizing a built-in index step.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6542865
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:8; ISSN IPTLE; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
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47 OTHER INSTRUMENTATION
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
DIFFRACTION GRATINGS
EFFICIENCY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRATINGS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MODE SELECTION
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
WAVEGUIDES