Plasma diagnostics during off-axis magnetron sputtering of Y sub 1 Ba sub 2 Cu sub 3 O sub 7 single target; the abnormal relation between target self-bias voltage and RF power

Conference · Thu Jan 25 04:00:00 EST 1990 · AIP Conference Proceedings (American Institute of Physics); (USA)

OSTI ID:6535653

Yamamoto, K; Eom, C B; Sun, J Z; Keith, D; Geballe, T H ^[1]

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1. Stanford University, Stanford, CA (USA)

The self-bias voltage on the rf electrode is used to obtain information concerning negative ion current in rf magnetron sputtering from a single ceramic target. Measurement is made as a function of rf power for YBaCuO and other perovskite targets in an Ar+O{sub 2} mixture plasma. The self-bias voltage initially increases with increasing rf power, and then passes through a maximum and decreases. This abnormal relation between self-bias voltage and rf power is enhanced with increasing O{sub 2}/Ar ratio in the Ar-O{sub 2} mixture plasma and also for Ba-containing targets. The bias voltage drop is consistent with the composition deviation of on-axis deposited films and is attributed to negative ion formation at the target. Therefore negative ion formation can be indirectly monitored by the target self-bias voltage.

• OSTI ID: 6535653
• Report Number(s): CONF-891092--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (USA) Journal Volume: 199:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
DEPOSITION
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
EQUIPMENT
FILMS
HIGH-TC SUPERCONDUCTORS
MAGNETRONS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
PLASMA DIAGNOSTICS
RF SYSTEMS
SPUTTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
YTTRIUM OXIDES