Melt depth and regrowth kinetics in pulsed laser annealing of silicon and gallium arsenide

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:6527071

Galvin, G J; Thompson, M O; Mayer, J W; Peercy, P S; Hammond, R B

High-intensity pulsed laser irradiation of semiconductor materials results in ultrafast melting and resolidification of a thin surface layer. An experimental probe has been developed based on the discontinuous change in electrical conductivity of a semiconductor material upon melting. Real time monitoring of the dynamics of pulsed laser melting and resolidification can be obtained by transient electrical conductance measurements. Melting velocities from 5 to 200 m/s and resolidification velocities of 1 to 20 m/s have been observed in silicon with this technique. Simultaneous measurement of the optical reflectance provides additional complementary information on laser melting dynamics. Data from both electrical conductance and optical reflectance measurements is presented for silicon and gallium arsenide. The real time experimental data provide strong evidence for a simple thermal model for melting and resolidification during nanosecond pulsed laser annealing. 9 figures.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science; Los Alamos National Lab., NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6527071
• Report Number(s): SAND-82-2986C; CONF-830123-1; ON: DE83005192
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HEATING
KINETICS
LASER-RADIATION HEATING
MATERIALS
MELTING
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
PULSES
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLIDIFICATION
SURFACE PROPERTIES