Melt dynamics of silicon-on-sapphire during pulsed laser annealing

Journal Article · Tue Mar 01 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93965· OSTI ID:6481042

Thompson, M O; Galvin, G J; Mayer, J W; Peercy, P S; Hammond, R B

Transient electrical conductance measurements have been made on 0.45-..mu..m silicon-on-sapphire during pulsed laser annealing with 25-ns ruby irradiation. The photoconductive contribution to the transient current was sufficiently small that the entire melt and resolidification process could be directly observed. The technique yields quantitative measures of melt depths, melting velocities (5--13 m/s), and solidification velocities (2.8--3.3 m/s). Combined with the complementary techniques of time-resolved reflectivity, energy transmission, and calorimetric energy absorption, transient conductance provides a powerful new diagnostic for investigating melt dynamics.

• Research Organization: Department of Material Science, Cornell University, Ithaca, New York 14853
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6481042
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ABSORPTION
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ANNEALING
CALORIMETRY
CHALCOGENIDES
CORUNDUM
CURRENTS
DATA
DIMENSIONS
DYNAMICS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
EXPERIMENTAL DATA
HEAT TREATMENTS
HEATING
INFORMATION
IRRADIATION
LASER-RADIATION HEATING
LASERS
MECHANICS
MINERALS
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PLASMA HEATING
PULSES
REFLECTIVITY
RESOLUTION
RUBY LASERS
SAPPHIRE
SEMIMETALS
SILICON
SOLID STATE LASERS
SURFACE PROPERTIES
THICKNESS
TIME RESOLUTION
TIMING PROPERTIES
TRANSMISSION