Epitaxial growth of Bi-Sr-Ca-Cu-O superconducting thin films by metalorganic chemical vapor deposition

Journal Article · Mon Aug 27 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104269· OSTI ID:6522149

Sugimoto, T; Yoshida, M; Yamaguchi, K; Sugawara, K; Shiohara, Y; Tanaka, S ^[1]

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1. Superconductivity Research Laboratory, ISTEC, 10-13 Shinonome 1-chome Koto-ku, Tokyo (Japan)

The epitaxial growth of Bi-Sr-Ca-Cu-O thin films was achieved by metalorganic chemical vapor deposition. The film-MgO substrate interface has been examined and discussed using the cross-sectional transmission electron microscopy. On the smooth surface of the MgO substrate, the lattice of the film was ordered from the first atomic layer on the surface of the substrate, and the misfit dislocations caused by the large lattice mismatch between the film and the MgO substrate appeared every four or five lattices. The first Bi{sub 2}O{sub 2} layer on the substrate surface was found to be regularly arranged regardless of the roughness of the substrate surface. The x-ray diffraction patterns of the films as a function of the growth time showed that the high {Tc} phase (Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub {ital x}}) was not formed in the early stage of the growth while its amount increased as the growth was prolonged. These results suggest that the high {Tc} phase is not directly grown but formed via the low {ital T}{sub {ital c}} phase (Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub {ital x}}) or semiconducting phase (Bi{sub 2}Sr{sub 2}CuO{sub {ital x}}) with the thermal diffusion limited growth of Cu-O and Ca layers. Even an 8-nm-thick film was found to be free of the compressive stress forming misfit dislocations observed in the transmission electron microscope photograph of the thicker film, since the length of the {ital c} axis in the 8-nm-thick film is not enlarged from the result of the x-ray diffraction pattern.

• OSTI ID: 6522149
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:9; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
ALKALINE EARTH METAL COMPOUNDS
BISMUTH COMPOUNDS
BISMUTH OXIDES
CALCIUM COMPOUNDS
CALCIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER OXIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
HIGH-TC SUPERCONDUCTORS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
SUPERCONDUCTORS
SURFACE COATING
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE