Dielectric function of InGaAs in the visible

Conference · Mon Jan 01 04:00:00 EST 1990

OSTI ID:6521078

Alterovitz, S A; Sieg, R E; Yao, H D; Snyder, P G; Woollam, J A; Pamulapati, J; Bhattacharya, P K; Sekula-Moise, P A

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
• OSTI ID: 6521078
• Report Number(s): N-90-26683; NASA-TM--103246; E--5672; NAS--1.15:103246; CONF-900935--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALGORITHMS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIELECTRIC PROPERTIES
DIMENSIONS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MATHEMATICAL LOGIC
MATHEMATICAL MODELS
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PNICTIDES
STABILITY
SURFACE COATING
THICKNESS