International conference on metallurgical coatings and thin films

Conference · Mon Apr 01 04:00:00 EST 1991

OSTI ID:5620401

Alterovitz, S A; Sieg, R M; Yao, H D; Snyder, P G; Woollam, J A; Pamulapati, J; Bhattacharya, P K; Sekula-moise, P A

Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
• OSTI ID: 5620401
• Report Number(s): N-91-19935; NASA-TM--103792; E--6069; NAS--1.15:103792; CONF-9104187--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELLIPSOMETRY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MEASURING METHODS
PHYSICAL PROPERTIES
PNICTIDES
STRAINS
SUBSTRATES