Reflection high-energy-electron-diffraction studies of mass transport and low-temperature growth of Ag/Si(111)

Journal Article · Sat May 15 04:00:00 EDT 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.47.12705· OSTI ID:6518922

Roos, K R; Tringides, M C ^[1]

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1. Ames Laboratory and Department of Physics, Iowa State University, Ames, Iowa 50011 (United States)

We have studied the growth modes and mass-transport mechanism of the Ag/Si(111) system by using reflection high-energy-electron-diffraction quantitative spot analysis. The growth mode at 150 K is quasi-layer-by-layer, indicating significant adatom mobility. The scaling of the specular beam intensity with time for several deposition rates suggests the absence of thermally activated diffusion. The presence of nonthermal diffusion is further confirmed from the comparison of the initial growth rates and the final full width at half maximum attained at different deposition rates for the Ag/Si(111)-([radical]3 [times] [radical]3 )[ital R]30[degree] system.

• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 6518922
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:19; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
CHEMICAL REACTIONS
CHEMISORPTION
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTAL-PHASE TRANSFORMATIONS
DIFFRACTION
DIFFUSION
ELECTRON DIFFRACTION
ELEMENTS
EPITAXY
METALS
MOLECULAR BEAM EPITAXY
NUCLEATION
PHASE TRANSFORMATIONS
SCATTERING
SEMIMETALS
SEPARATION PROCESSES
SILICON
SILVER
SORPTION
SORPTIVE PROPERTIES
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TRANSITION ELEMENTS