skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Eighth quarterly report, June 1-August 31, 1980

Technical Report ·
OSTI ID:6518068

The diffusion coefficient of magnesium in Zn/sub 3/P/sub 2/ has been determined by two methods: (1) from the rate of decrease of the quantum efficiency at short wavelengths; and (2) from the location of the EBIC response maxima in cleaved junctions. The diffusion coefficient of magnesium ranges from 4.9 +- 1.6.10/sup -10/ cm/sup 2//min determined by EBIC measurements to 1.7.10/sup -10/ cm/sup 2//min from spectral response measurements. The values of n and k of thin (60 to 150 A) magnesium films has been measured over a range wavelengths. This will enable adequate modeling of single and multiple layer AR coatings in the future. The heating of magnesium contacts on Zn/sub 3/P/sub 2/ has the effect of reversing grain boundary recombination and leads to enhanced output at the boundary. EBIC measurements show a higher output at grain boundaries after heating at 100/sup 0/C for 94 minutes. The V/sub oc/ of ZnO/Zn/sub 3/P/sub 2/ devices exhibits a non linear dependence on ln J/sub sc/ at high current levels suggesting photo current suppression. Thin Zn/sub 3/P/sub 2/ flms were prepared on carbon coated 3% Si-Fe in an attempt to lower R/sub s/ x A and improve device efficiency. Although the new substrate results in lower R/sub s/ x A and high short circuit currents are obtained, the open circuit potential is reduced and the overall conversion efficiency is the same as devices prepared on Fe/C coated mica. (WHK)

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6518068
Report Number(s):
SERI/PR-80062-1-T1
Country of Publication:
United States
Language:
English