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Title: Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Seventh quarterly report, March 1, 1980-May 31, 1980

Technical Report ·
OSTI ID:6510640

ZnO/Zn/sub 3/P/sub 2/ semiconductor heterojunction device development has centered on obtaining low resistivity ZnO films whose resistivity is stable with time. Device instabilities have been noted which are associated with the time dependence of the ZnO resistivity. Hydrogen and to a lesser extent, chlorine-doped films exhibit the effect; however, ZnO films prepared by co-sputtering with zinc metal have low resistivity, high transmission, and are stable. The initial device results show reverse saturation currents in the 10/sup -7/ A/cm/sup 2/ range. P/N junction development has continued to examine the role of magnesium in Zn/sub 3/P/sub 2/ by examination of the diode parameters and spectral response of heat treated TMF magnesium light diodes. Changes in the spectral response of TMF magnesium diodes associated with the formation of a buried n on p junction are not observed for p-doping levels of 4.10/sup 17/ cm/sup -3/ although the fall off in blue response is seen for N/sub p/ = 1.10/sup 16/ cm/sup -3/, indicating that the magnesium solubility at 100/sup 0/C is between these values. EBIC examination of the junction depth versus time gives an estimate of the diffusion coefficient of magnesium of 2.10/sup -10/ cm/sup 2//min. Diffused magnesium/Zn/sub 3/P/sub 2/ junctions have now yielded open circuit voltages in excess of 0.6 volts at J/sub sc/ = 15 mA/cm/sup 2/ (2 x AM1).

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6510640
Report Number(s):
SERI/PR-8062-1-T6
Country of Publication:
United States
Language:
English