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Title: Self-diffusion of Er and Hf inpure and HfO/sub 2/-doped polycrystalline Er/sub 2/O/sub 3/. [Hf-175 and Er-169]

Technical Report ·
DOI:https://doi.org/10.2172/6516086· OSTI ID:6516086

Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970/sup 0/C in pure and HfO/sub 2/-doped polycryatalline Er/sub 2/O/sub 3/. Up to about 10 m/o HfO/sub 2/ dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO/sub 2/, deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er/sub 2/O/sub 3/ was 82.2 Kcal/mole and increased with the HfO/sub 2/ dopant level present. Self-diffusion of Hf was measured in pure Er/sub 2/O/sub 3/ having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er/sub 2/O/sub 3/. The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO/sub 2/ doped Er/sub 2/O/sub 3/ compositions. Despite a clustering effect, the HfO/sub 2/ dopant increased the Hf volume diffusion coefficients.

Research Organization:
Ames Lab., Ames, IA (United States)
DOE Contract Number:
W-7405-ENG-82
OSTI ID:
6516086
Report Number(s):
IS-T-818; TRN: 79-005417
Resource Relation:
Other Information: Thesis
Country of Publication:
United States
Language:
English