Epitaxial growth of NbN on an ultrathin MgO/semiconductor system

Journal Article · Sat Aug 01 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339708· OSTI ID:6512053

Tonouchi, M; Sakaguchi, Y; Kobayashi, T

NbN epitaxial growth on an ultrathin MgO/semiconductor system was carried out by reactive sputtering. It was revealed that (100)-oriented NbN epitaxy was achieved on a (100)-oriented Si substrate by introducing a MgO buffer layer as thin as 5 A at the interface. An interrupt-sputtering technique was newly conducted to obtain the epitaxial films, which were intermittently deposited by rf sputtering. A metal-insulator-semiconductor tunneling Schottky diode with epitaxial NbN was prepared using this technique, and evaluated in its current-voltage characteristics. Our study indicated that the NbN epitaxy mechansim can be explained by its growth on a (100) naturally oriented 5-A MgO layer.

• Research Organization: Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
• OSTI ID: 6512053
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Journal Issue: 3 Vol. 62:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
COATINGS
ELEMENTS
EPITAXY
FABRICATION
FILMS
JUNCTIONS
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SPUTTERING
SUPERCONDUCTING DEVICES
SUPERCONDUCTING JUNCTIONS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY