An AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process

Journal Article · Tue Jan 31 23:00:00 EST 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072369· OSTI ID:6506137

Wada, O; Sakurai, T; Yamakoshi, S

This paper describes the microcleaved facets (MCF) process developed for AlGaAs/GaAs laser fabrication which can avoid the previous substrate cleavage and therefore be applicable to preparing both discrete short-cavity lasers and optoelectronic integrated circuits (OEIC's). An AlGaAs/GaAs double heterostructure ridge-waveguide laser with an extremely short cavity length, namely 20 ..mu..m, was first realized by this process. A threshold current as low as 20 mA and a single longitudinal mode lasing were achieved. The usefulness of this process for integrating a laser and a monitoring photodiode on a GaAs substrate is also demonstrated.

• Research Organization: Fujitsu Limited, Atsugi 243-01
• OSTI ID: 6506137
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 20:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CLEAVAGE
CONTROL
CRYSTAL FACES
CRYSTAL STRUCTURE
CURRENTS
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTEGRATED CIRCUITS
JUNCTIONS
LASER CAVITIES
LASERS
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
MODE CONTROL
PHOTODIODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
THRESHOLD CURRENT
WAVEGUIDES