AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process

Journal Article · Tue Jan 31 23:00:00 EST 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072369· OSTI ID:6358630

Wada, O; Yamakoshi, S; Sakurai, T

This paper describes the microcleaved facets process developed for AlGaAs/GaAs laser fabrication, which can avoid the previous substrate cleavage and therefore be applicable to preparing both discrete short cavity lasers and optoelectronic integrated circuits. An AlGaAs/GaAs double heterostructure ridge-waveguide laser with an extremely short cavity length, namely 20 microns, was first realized by this process. A threshold current as low as 20 mA and a single longitudinal mode lasing were achieved. The usefulness of this process for integrating a laser and a monitoring photodiode on a GaAs substrate is also demonstrated. 29 references.

• Research Organization: Fujitsu, Ltd., Atsugi, Japan
• OSTI ID: 6358630
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTEGRATED CIRCUITS
JUNCTIONS
LASER CAVITIES
LASERS
MICROELECTRONIC CIRCUITS
PHOTODIODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING
WAVEGUIDES