The effect of oxygen in the Si substrate on Mo, W, Ti, and Co silicide growth by infrared laser heating

Journal Article · Wed Aug 01 00:00:00 EDT 1990 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2086998· OSTI ID:6504418

Lee, H S; Wolga, G J ^[1]

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1. School of Electrical Engineering, Cornell Univ., Ithaca, NY (US)

This study of the effect of implanted oxygen in the Si substrate was accomplished using an IR heating method and a combination of different materials analysis techniques. Principally, Auger electron spectroscopy combined with depth profiling was implemented to investigate the composition of the reacted metal-Si systems as well as the relative movement of the oxygen during silicide formation. The authors systematic study of these four metal-Si systems yielded some interesting results. First, for the three metals Mo, W, and Ti, we observed basically inhibited metal-Si reactions at laser processing conditions that yielded completely reacted metal silicides without implanted oxygen. Second, the evolution from inhibited reactions through partial, metal-rich silicides and finally to completely reacted metal silicide formation at high temperatures was observed and characterized. Last, a distinctly response to the presence of oxygen was observed for the Ti samples as compared to the Mo and W samples.

• OSTI ID: 6504418
• Journal Information: Journal of the Electrochemical Society; (USA), Vol. 137:8; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
74 ATOMIC AND MOLECULAR PHYSICS
MOLYBDENUM
CHEMICAL REACTION KINETICS
OXYGEN
ION IMPLANTATION
SILICON
TITANIUM
TUNGSTEN
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COMPOSITION
COBALT SILICIDES
INTERFACES
LASER-RADIATION HEATING
SUBSTRATES
VACANCIES
COBALT COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPECTROSCOPY
ELEMENTS
HEATING
KINETICS
METALS
NONMETALS
PLASMA HEATING
POINT DEFECTS
REACTION KINETICS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
360102 - Metals & Alloys- Structure & Phase Studies
656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)
640302 - Atomic
Molecular & Chemical Physics- Atomic & Molecular Properties & Theory