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Polycrystalline diamond body/silicon nitride substrate composite

Patent ·
OSTI ID:6504401
; ;
A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powderenveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
Assignee:
General Electric Co
Patent Number(s):
US 4234661
OSTI ID:
6504401
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
CARBON
COMPOSITE MATERIALS
DIAMONDS
ELEMENTS
FABRICATION
HOT PRESSING
MATERIALS
MATERIALS WORKING
MINERALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PNICTIDES
PRESSING
SILICON ALLOYS
SILICON COMPOUNDS
SILICON NITRIDES