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Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

Conference ·
OSTI ID:6452665
An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO/sub 2/), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO/sub 2/ substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO/sub 2/ and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO/sub 2/.
Research Organization:
National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
OSTI ID:
6452665
Report Number(s):
N-87-18668; NASA-TM-89818; E-3439; NAS-1.15:89818; CONF-870388-8
Country of Publication:
United States
Language:
English