A theoretical analysis of the transient intensity noise of semiconductor lasers

Journal Article · Sun Jan 01 04:00:00 EST 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.16238· OSTI ID:6503844

Czylwik, A ^[1]

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1. Technische Hochschule Darmstadt, Institut fur Ubertragungstechnik, Merckstrasse 25, 6100 Darmstadt (DE)

The nonstationary intensity noise of a high-speed modulated semiconductor laser is investigated. The analysis is based on a rate equation method with Langevin fluctuation sources. The variance and the autocorrelation function of the intensity noise are calculated analytically with a state-space approach. The time-variant statistical properties of the intensity noise are evaluated numerically for the turn-on transient. The numerical calculation yields that the difference between intensity noise and photon number fluctuation during the turn-on transient can be neglected. It is shown that a significant part of the nonstationary intensity noise can be described as timing jitter of the relaxation oscillations.

• OSTI ID: 6503844
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:1; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANALYTICAL SOLUTION
DATA
ELECTRICAL TRANSIENTS
ELEMENTARY PARTICLES
INFORMATION
LASERS
MASSLESS PARTICLES
NOISE POLLUTION
NUMERICAL DATA
NUMERICAL SOLUTION
OSCILLATIONS
PHOTONS
POLLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THEORETICAL DATA
TRANSIENTS
VOLTAGE DROP