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Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process: Task II, LSSA Project. Quarterly report No. 3

Technical Report ·
DOI:https://doi.org/10.2172/6493875· OSTI ID:6493875
The thermal stability of CVD SiO/sub x/N/sub y/ layers in contact with molten silicon has been studied by x-ray analysis. The results indicate that these layers are converted to the ..cap alpha.. and ..beta.. phases of Si/sub 3/N/sub 4/ with the ..beta.. phase predominating. Results to date indicate that the ..beta.. phase is the more stable form in contact with molten silicon. This explains why CVD oxynitride layers appeared to be more stable in contact with molten silicon than CVD Si/sub 3/N/sub 4/ layers in previous experiments. The oxygen present in the oxynitride layers is apparently removed during contact with the silicon melt with simultaneous conversion to Si/sub 3/N/sub 4/, principally the ..beta.. form. High-density hot-pressed Si/sub 3/N/sub 4/ has been prepared using MgO as binder. This material was found to be ..beta..-Si/sub 3/N/sub 4/ by x-ray diffractometry and displayed excellent chemical inertness to molten silicon. The purity of the material was also much superior to that of hot-pressed material purchased externally. Mullite crucibles displayed some high-temperature instability effects which may influence the bonding of CVD layers to the mullite surface. The Mark II ribbon growth apparatus has been installed and tested.
Research Organization:
RCA Labs., Princeton, NJ (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
NAS-7-100-954901
OSTI ID:
6493875
Report Number(s):
DOE/JPL/954901-78/3
Country of Publication:
United States
Language:
English