Ion assisted sputter deposition of Mo-Si multilayers

Conference · Sun Nov 01 04:00:00 EST 1992

OSTI ID:6491878

Vernon, S P ^[1]; Stearns, D G; Rosen, R S ^[2]

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1. Vernon Applied Physics, Torrance, CA (United States)
2. Lawrence Livermore National Lab., CA (United States)

X-ray multilayer (ML) structures fabricated utilizing magnetron sputter deposition exhibit a degradation instructural quality with increased deposition pressure. The observed change in morphology is attributed to a reduced mobility of surface adatoms which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and allows direct control of the energy density supplied to the film surface during thin film growth. The technique supplements the energy lost to thermalization in high pressure deposition and permits the fabrication of high quality ML structures at elevated processing pressures. A three fold improvement in the soft x-ray normal incidence reflectance (NIR) at 130 [Angstrom] results for substrate bias voltages of order [approximately] -150V for Mo-Si MLs deposited at 10 mTorr Ar.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6491878
• Report Number(s): UCRL-JC-109359-Rev.1; CONF-9204120--9-Rev.1; ON: DE93013830; CNN: L1228
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPE AND RADIATION SOURCES
070205 -- Radiation Sources-- Industrial Applications
Radiation Processing-- (1987-)
36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
CHARGED PARTICLES
DEPOSITION
ELEMENTS
IONS
LAYERS
METALS
MOLYBDENUM
SEMIMETALS
SILICON
SPUTTERING
TRANSITION ELEMENTS