Comparison of polycrystalline Cu(In,Ga)Se{sub 2} device efficiency with junction depth and interfacial structure
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
- Physical Electronics Laboratories, Eden Prairie, Minnesota 55344 (United States)
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se{sub 2} thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2{ital p}, In 3{ital d}, Ga 2{ital p}, and Se 3{ital d} core lines were used to evaluate the surface and near surface chemistry of CuInSe{sub 2} and Cu(In,Ga)Se{sub 2} device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 64904
- Journal Information:
- Journal of Applied Physics, Vol. 78, Issue 1; Other Information: PBD: 1 Jul 1995
- Country of Publication:
- United States
- Language:
- English
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