Total dose dependence of soft-error hardness in 64kbit SRAMs evaluated by single-ion microprobe technique
- Waseda Univ., Tokyo (Japan)
- National Space Development Agency of Japan, Ibaraki (Japan). Tsukuba Space Center
Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables the authors to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage (V[sub th]) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.
- OSTI ID:
- 6488899
- Report Number(s):
- CONF-940726--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DATA
DOSES
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
INFORMATION
MEMORY DEVICES
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RELIABILITY
SEMICONDUCTOR DEVICES
TRANSISTORS