Soft error susceptibility and immune structures in dynamic random access memories (DRAM`s) investigated by nuclear microprobes
Journal Article
·
· IEEE Transactions on Nuclear Science
- Osaka Univ., Toyonaka (Japan). Faculty of Engineering Science
- Mitsubishi Electric Corp., Hyogo (Japan). ULSI Lab.; and others
Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluation of the charge collection which induces upset in dynamic/random access memories (DRAM`s). Soft error susceptibility in DRAM`s as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reverse-biased n{sup +}p junctions with various barrier well structures has been compared with that with a conventional well in a p{sup {minus}} epitaxial layer on a p{sup +} substrate.
- OSTI ID:
- 242447
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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