Reactively sputtered V/sub 3/Si and Nb/sub 3/Ge films
Conference
·
· IEEE Trans. Magn.; (United States)
OSTI ID:6484975
We have investigated the reactive sputtering of V-Si and Nb-Ge films in a dc diode and in a magnetron sputtering system toward the possible use of such films in high (10K) operating temperature Josephson devices. Large differences in the dependence of T /SUB c/ on deposition temperature and on average film composition were found. Above 700/sup 0/C maximum T /SUB c/ 's of 16.8K in V/sub 3/Si and 21K in Nb/sub 3/Ge were obtained in the dc diode sputtered films. Below this temperature T /SUB c/ 's degraded, however at 500/sup 0/C values of close to 12K were still found in both sets of films. Transmission electron microscopy studies indicate that a growth mechanism operates during both sputtering processes which can produce adjacent grains which have greatly different compositions. As a result, high T /SUB c/ 's in both Nb-Ge and V-Si can be obtained in films which have average compositions very far removed from ideal 3/1 stoichiometry.
- Research Organization:
- Westinghouse RandD Center, Pittsburgh, Pennsylvania
- OSTI ID:
- 6484975
- Report Number(s):
- CONF-840937-
- Conference Information:
- Journal Name: IEEE Trans. Magn.; (United States) Journal Volume: MAG 21:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
CRITICAL TEMPERATURE
CRYSTAL GROWTH
DEPOSITION
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
FILMS
GERMANIUM ALLOYS
GRAIN GROWTH
JOSEPHSON JUNCTIONS
JUNCTIONS
MAGNETRONS
MEASURING METHODS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NIOBIUM ALLOYS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON ALLOYS
SPUTTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
THERMODYNAMIC PROPERTIES
THIN FILMS
TRANSITION TEMPERATURE
TRANSMISSION ELECTRON MICROSCOPY
VANADIUM ALLOYS
360101 -- Metals & Alloys-- Preparation & Fabrication
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
CRITICAL TEMPERATURE
CRYSTAL GROWTH
DEPOSITION
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
FILMS
GERMANIUM ALLOYS
GRAIN GROWTH
JOSEPHSON JUNCTIONS
JUNCTIONS
MAGNETRONS
MEASURING METHODS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NIOBIUM ALLOYS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON ALLOYS
SPUTTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
THERMODYNAMIC PROPERTIES
THIN FILMS
TRANSITION TEMPERATURE
TRANSMISSION ELECTRON MICROSCOPY
VANADIUM ALLOYS