Stimulated emission and laser oscillations in ZnSe-Zn/sub 1-x/Mn/sub x/Se multiple quantum wells at approx. 453 nm
Journal Article
·
· Appl. Phys. Lett.; (United States)
In this letter we report the first observation of stimulated emission and laser oscillations occurring in ZnSe-Zn/sub 1-x/Mn/sub x/Se quantum well structures. The results were obtained in superlattices consisting of alternating layers of ZnSe and Zn/sub 1-x/Mn/sub x/Se on a ZnSe buffer layer grown by molecular beam epitaxy on GaAs. Gain spectra were measured on these samples and thresholds for stimulated emission determined for various emission wavelengths. Optically pumped lasers were fabricated from one of these quantum well structures and found to operate in the blue portion of the visible spectrum from 451.5 to 455 nm. Lasing was observed up to 80 K.
- Research Organization:
- Department of Physics, Purdue University, West Lafayette, Indiana 47907
- OSTI ID:
- 6483997
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Stimulated emission and laser oscillations in ZnSe-Zn/sub 1-x/Mn/sub x/Se multiple quantum wells at approx. 453 nm
Epitaxial ZnS, ZnSe and ZnS-ZnSe superlattices grown on (001)GaAs by pulsed-laser ablation
Epitaxial ZnS, ZnSe and ZnS-ZnSe superlattices grown on (001)GaAs by pulsed-laser ablation
Journal Article
·
Thu Nov 14 23:00:00 EST 1985
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6346118
Epitaxial ZnS, ZnSe and ZnS-ZnSe superlattices grown on (001)GaAs by pulsed-laser ablation
Conference
·
Sat Oct 31 23:00:00 EST 1992
·
OSTI ID:10118460
Epitaxial ZnS, ZnSe and ZnS-ZnSe superlattices grown on (001)GaAs by pulsed-laser ablation
Conference
·
Sat Oct 31 23:00:00 EST 1992
·
OSTI ID:6828109
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER RADIATION
LASERS
LOW TEMPERATURE
LUMINESCENCE
MANGANESE COMPOUNDS
MANGANESE SELENIDES
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
OPTICAL PUMPING
PHOTOLUMINESCENCE
PNICTIDES
PUMPING
RADIATIONS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SUPERLATTICES
THRESHOLD ENERGY
TRANSITION ELEMENT COMPOUNDS
VERY LOW TEMPERATURE
VISIBLE RADIATION
ZINC COMPOUNDS
ZINC SELENIDES
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER RADIATION
LASERS
LOW TEMPERATURE
LUMINESCENCE
MANGANESE COMPOUNDS
MANGANESE SELENIDES
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
OPTICAL PUMPING
PHOTOLUMINESCENCE
PNICTIDES
PUMPING
RADIATIONS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SUPERLATTICES
THRESHOLD ENERGY
TRANSITION ELEMENT COMPOUNDS
VERY LOW TEMPERATURE
VISIBLE RADIATION
ZINC COMPOUNDS
ZINC SELENIDES