Measurement of interface recombination velocity in (Pb,Sn)Te/PbTe double-heterostructure laser diodes
The effective minority-carrier lifetime in the active region of Pb/sub 0.86/Sn/sub 0.14/Te/PbTe double-heterostructure (DH) laser diodes has been experimentally determined for a series of diodes with active-region widths ranging from 0.7 to 3.9 ..mu..m using a measurement technique which involves observing the dependence of the threshold current density on the duration of a current pulse input. From the data, it is inferred that the interface recombination velocity at the heterojunctions is as high as 1 x 10/sup 5/ cm/sec at 5 /sup 0/K, while the bulk minority-carrier lifetime is 4.3 nsec. For a typical double-heterostructure laser with a 2-..mu..m active-region width, this implies a reduction in the internal quantum efficiency due to interface recombination of as much as 80%.
- Research Organization:
- Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
- OSTI ID:
- 6477993
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CHARGE CARRIERS
CURRENT DENSITY
DATA
EFFICIENCY
INFORMATION
INTERFACES
LASERS
LEAD COMPOUNDS
LEAD TELLURIDES
LIFETIME
PULSES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TELLURIDES
TELLURIUM COMPOUNDS
TIN COMPOUNDS
TIN TELLURIDES
ULTRALOW TEMPERATURE