Theory of optical nonlinearities of coupled-band quantum wells with many-body effects

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:64754

Pereira, M F ^[1]; Binder, R; Koch, S W ^[2]

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1. Centro Brasileiro de Pesquisas Fisicas, Rio de Janeiro (Brazil)
2. Univ. of Arizona, Tucson, AZ (United States)

Nonlinear optical properties of lattice-matched and strained semiconductor quantum wells are computed using generalized optical Bloch equations. The equations combine the influence of many-body, strain and band coupling effects, within a consistent model for quasi-static screening that includes contributions from all occupied subbands in a single-plasmon-pole type approximation. Numerical solutions for the absorption and refractive index change of InGaAs-AlGaAs systems are presented in the quasi-equilibrium regime for a broad range of excitation conditions, from the low density excitonic regime to the highly excited gain region. Good agreement with recent experimental results is found.

• OSTI ID: 64754
• Report Number(s): CONF-940142-; ISBN 0-8194-1441-7; TRN: IM9528%%414
• Resource Relation: Conference: OE/LASE `94: conference on optics, electro-optics, and laser applications in science and engineering, Los Angeles, CA (United States), 22-29 Jan 1994; Other Information: PBD: 1994; Related Information: Is Part Of Physics and simulation of optoelectronic devices II. Proceedings SPIE Volume 2146; Chow, W.W.; Osinski, M. [eds.]; PB: 496 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR MATERIALS
OPTICAL PROPERTIES
INDIUM ARSENIDES
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
SEMICONDUCTOR DEVICES
NONLINEAR PROBLEMS
MANY-BODY PROBLEM
THEORETICAL DATA
ENERGY GAP
HETEROJUNCTIONS