Statistical modeling of the inverse bipolar transistor for applications in digital large scale integration circuits

Thesis/Dissertation · Wed Jan 01 04:00:00 EST 1986

OSTI ID:6471874

Ebersman, B

A physical model of the inverse bipolar transistor is presented, with particular emphasis on high level injection operation. The models are intended for application to nonlinear circuit analysis programs to provide accurate circuit modeling capabilities for LSI technologies. Theoretical numerical analysis is combined with a large body of empirical data to develop and validate the physical models. The models implicitly contain full statistical dependencies and are suitable for statistical circuit design and optimization. DC parameters are established using special test structures, in conjunction with distributed modeling for high level conditions. Charge storage phenomena was characterized using storage time measurements for high level operation and using direct impedance measurements for low level conditions. The latter technique was extensively developed and is applied in conjunction with another set of special test structures. Precise accounting of charge storage was accomplished, and detailed verification results are presented for a variety of practical transistors. The results agree well with the theoretical predictions and support the validity of the measurement techniques.

• Research Organization: Syracuse Univ., NY (USA)
• OSTI ID: 6471874
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
99 GENERAL AND MISCELLANEOUS
990210* -- Supercomputers-- (1987-1989)
DESIGN
ELECTRIC CHARGES
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
STORAGE
TRANSISTORS