Depth profiling of polishing-induced contamination on fused silica surfaces
Laser-induced damage on optical surfaces is often associated with absorbing contaminants introduced by the polishing process. This is particularly the case for UV optics. Here secondary ion mass spectroscopy (SIMS) was used to measure depth profiles of finished process contamination on fused silica surfaces. Contaminants detected include the major polishing compound components (Ce or Zr from CeO2 or ZrO2), Al presently largely because of the use of Al2O3 in the final cleaning process (Fe, Cu,Cr) incorporated during the polishing step or earlier grinding steps. Depth profile data typically showed an exponential decay of contaminant concentration to a depth of 100-200 nm. This depth is consistent with a polishing redeposition layers formed during the chemo-mechanical polishing of fused silica. Peak contaminant levels are typically in the 10-100 ppm range, except for Al with exceeds 1000 ppm. A strong correlation has been shown between the presence of a gray haze damage morphology and the use of CeO2 polishing compound. No strong correlation was found however between high levels of Ce, or any other contaminant and the low damage threshold was observed. In fact one of the strongest indications of a correlation is between increased damage thresholds and increased Zr contamination. This suggests that the correlation between redeposition layer and laser damage threshold is not simple an absorbing contaminant issue.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 647024
- Report Number(s):
- UCRL-JC--128355; CONF-9710116--; ON: DE98052075; BR: DP0212000
- Country of Publication:
- United States
- Language:
- English
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