In situ investigation of temperature and bias dependent effects on the oxide growth of Si and Ge in an ECR plasma. Technical report. [ECR (Electron Cyclotron Resonance)]
The electron cyclotron resonance, ECR, plasma oxidation of Si and Ge was investigated using in-situ spectroscopic ellipsometry at substrate temperatures of 80 to 400 deg C and at bias voltages of -30 to +60 V. A study of the oxide growth kinetics by ECR plasma oxidation results in three distinct regions of growth with the first two being linear and the last parabolic. At the earliest linear stage the rate of oxide growth is the fastest, and corresponds to around 3 nm film thickness which is not dependent on bias. Following this, the second linear region displays an oxide growth rate proportional to the bias with typical growth rates, of 0.10, 0.32 and 0.60 nm/min for 0, +30 and +60V, respectively, at 300 deg C. The third region displays parabolic kinetics and corresponds to the Cabrera-Mott, C-M, theory for the oxidation by charged species in the limit of a low electric field. Activation energies of 0.19 and 0.28 eV are obtained using the C-M model for the ECR plasma oxidation of Si and Ge, respectively.
- Research Organization:
- North Carolina Univ., Chapel Hill, NC (United States). Dept. of Chemistry
- OSTI ID:
- 6467894
- Report Number(s):
- AD-A-265240/2/XAB; TR-59-ONR; CNN: N00014-89-J-1178
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
ELECTRON CYCLOTRON-RESONANCE
CHEMICAL RADIATION EFFECTS
GERMANIUM
OXIDATION
SILICON
SUBSTRATES
ELLIPSOMETRY
ACTIVATION ENERGY
EXPERIMENTAL DATA
PLASMA
CHEMICAL REACTIONS
CYCLOTRON RESONANCE
DATA
ELEMENTS
ENERGY
INFORMATION
MEASURING METHODS
METALS
NUMERICAL DATA
RADIATION EFFECTS
RESONANCE
SEMIMETALS
360605* - Materials- Radiation Effects
360604 - Materials- Corrosion
Erosion
& Degradation
400600 - Radiation Chemistry