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U.S. Department of Energy
Office of Scientific and Technical Information

Low-cost epitaxial techniques for solar-cell fabrication. Final report, 25 September 1979-24 September 1980

Technical Report ·
DOI:https://doi.org/10.2172/6466531· OSTI ID:6466531
This research and development effort was designed to investigate epitaxial growth processes which will allow the use of low-cost forms of silicon for fabricating high-efficiency, cost-effective solar cells. This report covers the results of a 1-y effort which involved characterization of potentially low-cost silicon substrates, epitaxial growth studies, and the fabrication and evaluation of solar cells made in the epitaxial layers. Silicon substrates prepared from metallurgical grade silicon by potentially low-cost purification and growth techniques form satisfactory substrates for epitaxial growth and the fabrication of 10 to 12% efficient solar cells. The allowable range of variation in the key parameters of the epitaxial process and cell structures was determined and it was found that a greater variation in these parameters is possible for solar cells compared with those required for epitaxial devices now produced in the semiconductor industry. Thin-film epitaxially grown solar cells were reproducibly demonstrated with efficiencies of over 10%. A scale-up to practical sized cells was shown to be feasible by fabricating cells of 10-cm/sup 2/ area with almost 10% efficiency.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); RCA Labs., Princeton, NJ (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6466531
Report Number(s):
SERI/TR-8274-1-T1
Country of Publication:
United States
Language:
English