Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Low-cost epitaxial techniques for solar-cell fabrication. Quarterly technical progress report No. 1, September 26, 1979-December 24, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5416290· OSTI ID:5416290
During the frst quarter, a candidate low-cost silicon substrate, designated upgraded metallurgical grade (UMG) silicon, was obtained. The electrical, physical, and structural properties of three grades of this material were measured. An initial epitaxial growth technique was standardized and qualified for application to the growth of diagnostic and solar-cell structures. Such structures were grown on the three UMG grades of substrates and the properties of these layers were compared to those of the substrates. It was generally found that the defect density in the epitaxial films was lower than in the substrates, but greater aerial variation was observed for the less pure, multicrystalline grades of substrates. Solar cells were fabricated in epitaxial structures grown on all three UMG grades of substrates. An AM-1 efficiency of 12.9% was obtained when the purest substrate grade was used, and 10.3% was achieved with a 15-..mu..m-thick film grown on the material of lowest purity.
Research Organization:
RCA Labs., Princeton, NJ (USA)
DOE Contract Number:
EG-77-C-01-4042
OSTI ID:
5416290
Report Number(s):
SERI/PR-8274-1
Country of Publication:
United States
Language:
English