High voltage v-groove solar cell
Patent
·
OSTI ID:6465743
A high voltage multijunction solar cell comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming v-shaped grooves in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one faceof the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.
- Assignee:
- Administrator of NASA
- Patent Number(s):
- US 4376872
- OSTI ID:
- 6465743
- Country of Publication:
- United States
- Language:
- English
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