Method of making a high voltage v-groove solar cell

Patent · Tue Jun 22 00:00:00 EDT 1982

OSTI ID:6460123

Chai, A; Evans, J C; Goradia, C P

A method is provided for making a high voltage multijunction solar cell which comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming v-shaped grooves in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.

• Assignee: Administrator of NASA
• Patent Number(s): US 4335503
• OSTI ID: 6460123
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DESIGN
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
MATERIALS
NOTCHES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT