An HEMT input charge preamplifier for nanoseconds signal processing time
Journal Article
·
· IEEE Transactions on Nuclear Science
- Politecnico di Milano (Italy). Dept. di Elettronica e Informazione
The capabilities of the high electron mobility transistor (HEMT) as front end device in charge preamplifiers for radiation detectors have been experimentally tested. The authors present the design and performance of a fast low-noise charge preamplifier having an HEMT as input transistor. An equivalent noise charge of 139 rms electrons, i.e., 1.13 keV FWHM in silicon detectors, has been measured at room temperature with 10 ns RC-CR shaping and 1 pF input capacitance.
- OSTI ID:
- 64620
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 42; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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