Charge-sensitive pulse preamplifier with a field-effect transistor input stage

Technical Report · Tue Oct 15 04:00:00 EDT 1963

OSTI ID:6193741

Wintenberg, R E; Pierce, J F

The purpose of this study was to demonstrate the application of a 2N2500 field-effect transistor in the input stage of a low-noise, charge-sensitive pulse preamplifier. This type preamplifier is used in conjunction with solid-state charged particle detectors and multichannel analyzers. The techniques used in designing this preamplifier are explained in some detail so that a background in transistor electronics should enable one to design a comparable preamplifier. The performance of this preamplifier can be summarized as follows: noise - 10 keV (fwhm) with 50 pf external capacity; gain - 1.0 x 10/sup 13/ volts/coulomb; rise time - 0.7 microseconds; fall time - 7.0 microseconds; maximum output - 4.5 volts across to 100 ohms; and linearity - one-half of 1%. The performance characteristics of this preamplifier are compared with other transistor and vacuum tube units. This preamplifier is much better than bipolar transistor units and almost as good as the best vacuum tube preamplifier.

• Research Organization: Tennessee Univ., Knoxville (USA). Dept. of Electrical Engineering
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6193741
• Report Number(s): DOE/OR/21400-T67; ON: DE85002839
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMPLIFIERS
DESIGN
ELECTRIC CHARGES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
PERFORMANCE
PREAMPLIFIERS
PULSE CIRCUITS
PULSE TECHNIQUES
SEMICONDUCTOR DEVICES
TRANSISTORS