Niobium microbolometers for far-infrared detection

Journal Article · Fri Mar 31 23:00:00 EST 1995 · IEEE Transactions on Microwave Theory and Techniques

DOI:https://doi.org/10.1109/22.375241· OSTI ID:64616

MacDonald, M E; Grossman, E N ^[1]

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1. National Institute of Standards and Technology, Boulder, CO (United States)

Microbolometers have been fabricated using a thin niobium film as the detector element. These detectors operate at room temperature, are impedance matched to planar antennas, and are suitable for broadband use at far-infrared wavelengths. The authors have achieved responsivities of up to 21 V/W at a bias of 6.4 mA, and electrical noise equivalent powers (NEP) of as low as 1.1{times}10{sup {minus}10} W/{radical}{ovr Hz} at 1 kHz at a bias of 3.6 mA. At this bias, the detectors are 1/f-noise limited below 1 kHz and are Johnson noise limited above 10 kHz. The 1/f noise in nV/{radical}{ovr Hz} increases approximately linearly with bias. This level of 1/f noise is approximately a factor of 7 below the best reported for bismuth microbolometers.

• OSTI ID: 64616
• Journal Information: IEEE Transactions on Microwave Theory and Techniques, Journal Name: IEEE Transactions on Microwave Theory and Techniques Journal Issue: 4 Vol. 43; ISSN IETMAB; ISSN 0018-9480
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
BOLOMETERS
DESIGN
FABRICATION
FAR INFRARED RADIATION
PERFORMANCE
RADIATION DETECTION