Stochastic electron heating in a capacitive rf discharge with non-Maxwellian and time-varying distributions

Journal Article · Wed Feb 01 04:00:00 EST 1995 · IEEE Transactions on Plasma Science

DOI:https://doi.org/10.1109/27.376565· OSTI ID:64595

Wood, B P ^[1]; Lieberman, M A; Lichtenberg, A J ^[2]

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1. Los Alamos National Laboratory, NM (United States). Physics Division
2. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences

In capacitively coupled ratio frequency discharges, the electrons gain and los energy by reflection from oscillating, high voltage sheaths. When time-averaged, this results in stochastic heating, which at low pressure is responsible for most of the electron heating in these discharges. Previous derivations of stochastic heating rates have generally assumed that the electron distribution is a time-invariant, single-temperature Maxwellian, and that the sheath motion is slow compared to the average electron velocity, so that electrons gain or lose a small amount of energy in each sheath reflection. Here the authors solve for the stochastic heating rates in the opposite limit of fast sheath motion and consider the applicability of the slow and fast sheath equations in the intermediate region. The authors also consider the effect of a two-temperature Maxwellian distribution on particle balance and the effect of a time-varying temperature on the heating rates and densities.

• DOE Contract Number: FG03-87ER13727
• OSTI ID: 64595
• Journal Information: IEEE Transactions on Plasma Science, Journal Name: IEEE Transactions on Plasma Science Journal Issue: 1 Vol. 23; ISSN ITPSBD; ISSN 0093-3813
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ELECTRON TEMPERATURE
ELECTRONS
ENERGY LOSSES
HEATING
HIGH-FREQUENCY DISCHARGES
PLASMA SHEATH
STOCHASTIC PROCESSES
TIME DEPENDENCE