Effect of step edge transition rates and anisotropy in simulations of epitaxial growth
Conference
·
OSTI ID:6457950
We present the results of a hybrid rate equation/Monte Carlo simulation of epitaxial growth on vicinal surfaces. We have studied the effect on surface morphology of changing transition rates at step edges, of changing detachment rates from step edges and clusters, and of adding anisotropy to the diffusion and incorporation kinetics at step edges and islands. The effect of the transition rates on surface morphology are discussed in terms of a balance between growth by nucleation and coalescence of islands and by the propagation of steps. 11 refs., 6 figs., 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6457950
- Report Number(s):
- SAND-90-1239C; CONF-901035--10; ON: DE91001251
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of step edge transition rates and anisotropy in simulations of epitaxial growth
Faceting at the step flow threshold in epitaxial growth on patterned surfaces
Step-flow growth on strained surfaces
Journal Article
·
Wed May 01 00:00:00 EDT 1991
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
·
OSTI ID:5559336
Faceting at the step flow threshold in epitaxial growth on patterned surfaces
Journal Article
·
Fri May 15 00:00:00 EDT 2009
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:21287024
Step-flow growth on strained surfaces
Journal Article
·
Mon Oct 25 00:00:00 EDT 1993
· Applied Physics Letters; (United States)
·
OSTI ID:6032291
Related Subjects
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
ANISOTROPY
COALESCENCE
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
DIFFUSION
KINETICS
MATERIALS
MONTE CARLO METHOD
MORPHOLOGY
NUCLEATION
SEMICONDUCTOR MATERIALS
SIMULATION
SURFACES
TEMPERATURE DEPENDENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
ANISOTROPY
COALESCENCE
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
DIFFUSION
KINETICS
MATERIALS
MONTE CARLO METHOD
MORPHOLOGY
NUCLEATION
SEMICONDUCTOR MATERIALS
SIMULATION
SURFACES
TEMPERATURE DEPENDENCE