Characterization of semiconductor surface-emitting laser wafers

Conference · Mon Jan 01 04:00:00 EST 1990

OSTI ID:6451593

Gourley, P L; Vawter, G A; Brennan, T M; Hammons, B E

The development of epitaxial semiconductor surface-emitting lasers has begun in recent years. These lasers are ultra-short (few {mu}m) Fabry-Perot resonators comprising epitaxial multilayer semiconductor mirrors and quantum well active regions. The resonators are single crystals grown along the lasing axis by molecular beam epitaxy (MBE) or chemical vapor deposition (CVD). They offer significant advances over conventional cleaved, edge-emitting lasers for creating lasers with single elements of 2 dimensional arrays, low beam divergence, engineered active regions, single longitudinal modes, and improved temperature characteristics. To realize the high potential of these new laser structures, techniques for characterizing the laser wafer after growth and between fabrication steps must be developed. In this paper we discuss several optical techniques that we have developed for this emerging surface-emitting laser technology.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6451593
• Report Number(s): SAND-90-1770C; CONF-901073--8; ON: DE91001336
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
ELECTRONIC EQUIPMENT
ENERGY-LEVEL TRANSITIONS
EPITAXY
EQUIPMENT
EXCITATION
LASER MIRRORS
LASERS
MIRRORS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
SURFACES