Selective silicide or boride film formation by reaction of vapor phase TiCl sub 4 with silicon or boron

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of the Electrochemical Society; (USA)

OSTI ID:6448913

Gallagher, P K ^[1]; Schrey, F; Levy, R A ^[2]

---

1. Dept. of Chemistry, Ohio State Univ., Columbus, OH (US)
2. AT and T Bell Lab., Murray Hill, NJ (US)

Methods for selectively forming titanium silicide and titanium boride by vapor phase reaction of titanium chloride precursors with silicon or boron substrate surfaces are examined. By passing TiCl{sub 4} through a heated chamber packed with titanium metal turnings within the reactor tube, a reduced titanium halide is generated. It was found that the silicide or boride formation in the reactor can thus be controlled at a much lower temperature. Also, excessive silicon erosion normally encountered at the higher operating temperature (> 775{degrees}C) required for the direct TiCl{sub 4} reaction is minimized. Characterization of the resulting films was conducted by use of scanning and transmission electron microscopy, sheet resistance measurements, and x-ray diffraction.

• OSTI ID: 6448913
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:5; ISSN 0013-4651; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORIDES
BORON
BORON COMPOUNDS
CHEMICAL REACTION KINETICS
CHLORIDES
CHLORINE COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FILMS
HALIDES
HALOGEN COMPOUNDS
KINETICS
MICROSCOPY
PRECURSOR
REACTION KINETICS
SCANNING ELECTRON MICROSCOPY
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUBSTRATES
THIN FILMS
TITANIUM BORIDES
TITANIUM CHLORIDES
TITANIUM COMPOUNDS
TITANIUM SILICIDES
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION