Stable continuous room-temperature laser operation of Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures grown on Si

Journal Article · Mon Jul 06 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98879· OSTI ID:6448402

Nam, D W; Holonyak, N Jr; Hsieh, K C; Kaliski, R W; Lee, J W; Shichijo, H; Epler, J E; Burnham, R D; Paoli, T L

Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the single well Al/sub x/Ga/sub 1-//sub x/As-GaAs QWH occurs at an excitation threshold of 6.7 x 10/sup 3/ W/cm/sup 2/ (J/sub eq/ = 2.8 x 10/sup 3/ A/cm/sup 2/), or a factor of 10 lower than similar multiple well QWH's. The laser operation is stable for four (or more) hours, the length of the ''test.''

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6448402
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
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CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
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HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
SILICON
STABILITY
THRESHOLD ENERGY
VAPOR DEPOSITED COATINGS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
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DATA
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ELEMENTS
ENERGY
EPITAXY
GALLIUM COMPOUNDS
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NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
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420300* - Engineering- Lasers- (-1989)