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Interaction of primary radiation defects with gold atoms in p-type Ge:Au

Journal Article · · Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:6446584
The aim was to obtain aditional information on the process of defect formation in p-type Ge:Au and to determine the energy position of a shallow level of radiation defects containing Au. Irradiation with 10 MeV electrons at a rate of 8 x 10/sup 13/ electronsxcm/sup -2/xsec1accelerator and the total doses delivered were 1.0 x 10/sup 16/--1.0 x 10/sup 18/ electrons/cm/sup 2/ at 380/sup 0/K. Radiation defects with a level at E/sub v/+0.015 eV are attributed to complexes of the Au/sub s/VV type. The experimental results also suggested that the energy levels of neutral radiation defects containing Au are located above the Ga levels.
Research Organization:
Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk
OSTI ID:
6446584
Journal Information:
Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 12:8; ISSN SPSEA
Country of Publication:
United States
Language:
English

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