Heavy ion induced failures in a power IGBT
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. Montpellier II (France)
- Univ. des Antilles-Guyanne, Kourou (French Guiana)
- Aerospatiale, Les Mureaux (France)
- Centre National d`Etudes Spatiales, Toulouse (France)
Power semiconductor devices are going through a rapid evolution. Modern components, such as Insulated Gate Bipolar Transistors (IGBT), have become widely accepted as well-suited devices for many power electronic applications. Here, heavy-ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.
- OSTI ID:
- 644227
- Report Number(s):
- CONF-970711--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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