Cell design modifications to harden a N-channel power IGBT against single event latchup
Journal Article
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)
Device simulator is used to analyze the heavy ion induced failure mechanism in Insulated Gate Bipolar Transistors (IGBTs) and to investigate hardening solutions. Single Event Latchup was already identified as the failure mechanism. Lateral and vertical modifications of the P{sup +} plug are proposed to reduce the efficiency of the parasitic thyristor, responsible for the latchup, and validated by 2D-simulations on a N-channel IGBT cell structure.
- Research Organization:
- Univ. Montpellier II (FR)
- OSTI ID:
- 20014692
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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