Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation
- Naval Research Lab., Washington, DC (United States)
- W.R. Curtice Consulting, Princeton Junction, NJ (United States)
The charge-collection processes of GaAs field-effect transistors are investigated as a function of the incident laser pulse energy via time-resolved charge-collection measurements and by two-dimensional computer simulation. The measurements and simulations reveal a feature that persists on a time scale of 100 ps, the amplitude of which varies strongly with the injected carrier density (pulse energy). The appearance of this feature is associated with a barrier lowering effect at the source/substrate junction, coupled with the drift-assisted transport of electrons through the substrate to the drain contact. This behavior is similar, but not identical to bipolar-gain models that have been suggested previously. The authors introduce the concept of ion-track segments and illustrate their utility in interrogating the complex mechanisms of charge collection and enhancement in GaAs FETs.
- OSTI ID:
- 644150
- Report Number(s):
- CONF-970934-; ISSN 0018-9499; TRN: 98:008083
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt3; Conference: RADECS 97: radiations and their effects on devices and systems conference, Cannes (France), 15-19 Sep 1997; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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