Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685218· OSTI ID:644139

Pease, R L ^[1]; Shaneyfelt, M; Winokur, P; Fleetwood, D ^[2]; Gorelick, J; McClure, S ^[3]; Clark, S ^[4]; Cohn, L; Alexander, D ^[5]

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1. RLP Research, Albuquerque, NM (United States)
2. Sandia National Labs., Albuquerque, NM (United States)
3. Hughes Space and Communication, Los Angeles, CA (United States)
4. Naval Surface Warfare Center, Crane, IN (United States)
5. Defense Special Weapons Agency, Alexandria, VA (United States)

The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.

• Research Organization: Sandia National Laboratory
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 644139
• Report Number(s): CONF-970934--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt3 Vol. 45; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
SENSITIVITY
THERMAL STRESSES