Physical characterization of electron trapping in Unibond{reg_sign} oxides

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685214· OSTI ID:644135

Gruber, O ^[1]; Paillet, P; Musseau, O; Marcandella, C ^[1]; Aspar, B ^[2]; Auberton-Herve, A J ^[3]

---

1. CEA Centre d`Etudes, Bruyeres-le-Chatel (France)
2. LETI DMITEC-CENG, Grenoble (France)
3. SOITEC S.A., Grenoble (France)

In this work, the authors study the trapping properties of Unibond{reg_sign} oxides. They measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, they explain this shift by considering a second type of electron traps.

• OSTI ID: 644135
• Report Number(s): CONF-970934--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt3 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
MATHEMATICAL MODELS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICON OXIDES
TRAPPING
X RADIATION