Neutron radiation effects in GaAs planar doped barrier diodes

Journal Article · Thu Apr 01 04:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.212324· OSTI ID:6440231

Kearney, M J; Couch, N R ^[1]; Edwards, M ^[2]; Dale, I ^[3]

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1. GEC-Marconi Ltd., Wembley (United Kingdom)
2. Rutherford-Appleton Lab., Chilton (United Kingdom)
3. GEC Plessey Semiconductors, Lincoln (United Kingdom)

The planar doped barrier (PDB) diode has recently been shown to be a very attractive alternative to the Schottky diode for many microwave and millimeter-wave mixer and detector applications. The authors have studied the degradation of GaAs planar doped barrier diodes subject to neutron irradiation. For fluences as high as 10[sup 15] cm[sup [minus]2] the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space.

• OSTI ID: 6440231
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:2; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
DAMAGE
ELEMENTARY PARTICLES
FERMIONS
HADRONS
IRRADIATION
NEUTRON FLUENCE
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPACE FLIGHT
USES